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Proceedings Paper

Luminescence of Er-doped amorphous silicon quantum dots
Author(s): Nae-Man Park; Tae-Youb Kim; Sang Hyeob Kim; Gun Yong Sung; Baek-Hyun Kim; Seong-Ju Park; Kwan Sik Cho; Jung H. Shin; Jung-Kun Lee; Michael Nastasi
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Paper Abstract

The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 µm was investigated. As the dot size was increased, the more Er ions were located near one dot due to its large surface area and more Er ions interacted with other Er ions. This Er-Er interaction caused a weak photoluminescence intensity despite the increase in the effective excitation cross section. The critical dot size, needed to take advantage of the positive effect on Er luminescence, is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er. However, the hydrogenation is considered to suppress this Er-Er interaction.

Paper Details

Date Published: 14 June 2004
PDF: 6 pages
Proc. SPIE 5361, Quantum Dots, Nanoparticles, and Nanoclusters, (14 June 2004); doi: 10.1117/12.528148
Show Author Affiliations
Nae-Man Park, Electronics and Telecommunications Research Institute (South Korea)
Tae-Youb Kim, Electronics and Telecommunications Research Institute (South Korea)
Sang Hyeob Kim, Electronics and Telecommunications Research Institute (South Korea)
Gun Yong Sung, Electronics and Telecommunications Research Institute (South Korea)
Baek-Hyun Kim, Kwangju Institute of Science and Technology (South Korea)
Seong-Ju Park, Kwangju Institute of Science and Technology (South Korea)
Kwan Sik Cho, Korea Advanced Institute of Science and Technology (South Korea)
Jung H. Shin, Korea Advanced Institute of Science and Technology (South Korea)
Jung-Kun Lee, Los Alamos National Lab. (United States)
Michael Nastasi, Los Alamos National Lab. (United States)


Published in SPIE Proceedings Vol. 5361:
Quantum Dots, Nanoparticles, and Nanoclusters
Diana L. Huffaker; Pallab Bhattacharya, Editor(s)

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