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Proceedings Paper

Development of an amorphous diamond (a-D) RF MEMS switch
Author(s): James R. Webster; Christopher W. Dyck; Thomas A. Friedmann; John P. Sullivan; Christopher D. Nordquist; Andrew J. Carton; Garth M. Kraus; Gary D. Schmidt
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Paper Abstract

We have developed radio frequency microelectromechanical systems (RF MEMS) capacitive switches using amorphous diamond (a-D) as a novel tunable dielectric with controlled leakage. The switch is fabricated from sputtered and electroplated metals using surface micromachining techniques. The mechanical stress and resistivity of the a-D dielectric are controlled by the parameters of a high-temperature annealing process. These initial devices exhibit a down-state capacitance of 2.6 pF, giving an isolation of better than 18 dB at 18 GHz, and a predicted static power dissipation of 10 nW. This technology is promising for the development of reliable, low power RF MEMS switches.

Paper Details

Date Published: 24 January 2004
PDF: 8 pages
Proc. SPIE 5344, MEMS/MOEMS Components and Their Applications, (24 January 2004); doi: 10.1117/12.527969
Show Author Affiliations
James R. Webster, Sandia National Labs. (United States)
Christopher W. Dyck, Sandia National Labs. (United States)
Thomas A. Friedmann, Sandia National Labs. (United States)
John P. Sullivan, Sandia National Labs. (United States)
Christopher D. Nordquist, Sandia National Labs. (United States)
Andrew J. Carton, Sandia National Labs. (United States)
Garth M. Kraus, Sandia National Labs. (United States)
Gary D. Schmidt, L&M Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 5344:
MEMS/MOEMS Components and Their Applications
Siegfried W. Janson; Albert K. Henning, Editor(s)

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