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Proceedings Paper

Light-emitting diodes with integrated omnidirectionally reflective contacts
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Paper Abstract

An electrically conductive omnidirectional reflector (ODR) is demonstrated as p-type ohmic contact for an AlGaInP light-emitting diode (LED). The ODR comprises the semiconductor, a metal layer and an intermediate low-refractive index dielectric layer. The SiO2 dielectric layer, located between a GaP and a silver layer, is perforated by an array of AuZn micro-contacts thus enabling electrical conductivity. It is shown that the ODR-LED has a significantly higher light-extraction efficiency as compared to LEDs employing distributed Bragg reflectors (DBRs). For devices emitting in the red wavelength range, external quantum efficiencies of 18 % and 11 % are obtained for ODR- and DBR-LEDs, respectively. The performance of the ODR-LED can be further increased by replacing the SiO2 dielectric with materials having a refractive index << 1.45. Performance characteristics of such powerful reflectors will be presented.

Paper Details

Date Published: 21 June 2004
PDF: 9 pages
Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); doi: 10.1117/12.527952
Show Author Affiliations
Thomas Gessmann, Rensselaer Polytechnic Institute (United States)
H. Luo, Rensselaer Polytechnic Institute (United States)
Jing-Qun Xi, Rensselaer Polytechnic Institute (United States)
Klaus P. Streubel, OSRAM Opto Semiconductors GmbH (Germany)
E. Fred Schubert, Rensselaer Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 5366:
Light-Emitting Diodes: Research, Manufacturing, and Applications VIII
Steve A. Stockman; H. Walter Yao; E. Fred Schubert, Editor(s)

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