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Proceedings Paper

Polymer flip-chip integrated AlGaAsSb/AlGaSb p-i-n photodetectors for 1550-nm high-speed optical interconnects
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Paper Abstract

AlGaAsSb/AlGaSb heterostructures offer the ability to realize high-performance devices for 1550 nm high-speed optical interconnect applications. In this context, we present the design, fabrication, integration and characterization of 10 GHz p-i-n photodetectors in this material system. This effort has involved an investigation into inductively coupled plasma (ICP) etching of these materials and the development of a novel process for their conductive polymer based flip chip die attach.

Paper Details

Date Published: 8 June 2004
PDF: 12 pages
Proc. SPIE 5353, Semiconductor Photodetectors, (8 June 2004); doi: 10.1117/12.527869
Show Author Affiliations
Saurabh K. Lohokare, Univ. of Delaware (United States)
Christopher A Schuetz, Univ. of Delaware (United States)
Zhaolin Lu, Univ. of Delaware (United States)
Dennis W. Prather, Univ. of Delaware (United States)
Oleg V. Sulima, AstroPower Inc. (United States)
Jeffery A. Cox, AstroPower Inc. (United States)
Victor A. Solov'ev, A. F. Ioffe Physico-Technical Institute (Russia)
Sergey V. Ivanov, A. F. Ioffe Physico-Technical Institute (Russia)
Jian V. Li, Univ. of Illinois/Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 5353:
Semiconductor Photodetectors
Kurt J. Linden; Eustace L. Dereniak, Editor(s)

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