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Proceedings Paper

Picosecond vibrational dynamics and stability of deuterated amorphous silicon thin films
Author(s): Jon-Paul R. Wells; Ruud E.I. Schropp; Lex F. G. van der Meer; Jaap I. Dijkhuis
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Paper Abstract

We report both temperature and excitation density dependent, four wave mixing measurements on Si-D stretch vibrations in deuterated amorphous silicon thin films. Utilising the infrared output of a free electron laser (FEL), we have made transient grating measurements of the temperature dependent anharmonic decay rate of Si-D stretch vibrations in deuterated amorphous silicon. Unlike Si-H vibrations, it is round that the excited deuterium mode relaxed with a single exponential decay rate into collective modes of the host, bypassing the local bending modes. Vibrational photon echo measurements suggest that phase coherence is lost via elastic phonon scattering with excitation (but not temperature) dependent contributions from non-equilibrium phonons. The degradation of p-i-n solar cells with identical intrinsic absorber layers (to those used for the time domain experiments) under prolonged light soaking treatments show that α-Si:D has a superior resistance to light induced defect creation.

Paper Details

Date Published: 16 June 2004
PDF: 7 pages
Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); doi: 10.1117/12.527699
Show Author Affiliations
Jon-Paul R. Wells, Univ. of Sheffield (United Kingdom)
Ruud E.I. Schropp, Univ. of Utrecht (Netherlands)
Lex F. G. van der Meer, FELIX/FOM-Institute for Plasma Physics (Netherlands)
Jaap I. Dijkhuis, Univ. of Utrecht (Netherlands)


Published in SPIE Proceedings Vol. 5352:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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