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Proceedings Paper

Simulation of energy deposition for scattering electrons in resist layer
Author(s): Yousong Tao; Yulin Zhang; Dayao Li
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Paper Abstract

There is a key problem in the fabricating sub-micron mask with lithography, which is how to improve accuracy of the mask by reducing the proximity effects. Backscattering electrons is the main factor of causing proximity effects. In this paper, we use random probability number to determine whether there is an elastic scattering happening between resist and Cr plate in the EB lithographing process. The distribution of the scattering electrons’ energy deposition in PMIMA resist is simulated. The graphs of the forward scattering energy deposition and backscattering energy deposition have been given. This is useful to amend the proximity effects.

Paper Details

Date Published: 14 May 2004
PDF: 8 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.527506
Show Author Affiliations
Yousong Tao, International Technological Univ. (United States)
Yulin Zhang, Shandong Univ. (China)
Dayao Li, Hermes Microvision, Inc. (United States)

Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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