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Proceedings Paper

The temperature compensation of the silicon piezoresistive pressure sensor using the half-bridge technique
Author(s): Kuo Huan Peng; C. M. Uang; Yih Min Chang
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Paper Abstract

The major factor affecting the high performance applications of the piezoresistive pressure sensor is the temperature dependence of its pressure characteristics. The influence due to temperature variation is manifested as a change in the span, bridge resistance, and offset of the sensor. In order to reduce the thermal drifts of the offset and span of the piezoresistive pressure sensor, a Half-Bridge-Compensating (HBC) technique is presented in this paper. There are many advantages such as the temperature compensation of the sensor (typically lower than 1%), and a simple and low cost application circuit. The theoretical analysis and experimental results show that both the output voltage and zero offset drift are much improved by the first-order HBC technique. The experimental results are matched to our theoretical analysis.

Paper Details

Date Published: 23 December 2003
PDF: 10 pages
Proc. SPIE 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III, (23 December 2003); doi: 10.1117/12.527387
Show Author Affiliations
Kuo Huan Peng, I-Shou Univ. (Taiwan)
C. M. Uang, I-Shou Univ. (Taiwan)
Yih Min Chang, Yung-Ta Institute of Technology & Commerce (Taiwan)

Published in SPIE Proceedings Vol. 5343:
Reliability, Testing, and Characterization of MEMS/MOEMS III
Danelle M. Tanner; Rajeshuni Ramesham, Editor(s)

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