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Proceedings Paper

AlGaInP light-emitting diode with metal reflector structure
Author(s): Wayne Jan; Tzer-Perng Chen; Chih-Sung Chang
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Paper Abstract

A high brightness AlGaInP LED with a high reflectivity metal reflector structure was proposed. The AlGaInP LED layers with metal reflector is bonded to the high thermal conductivity silicon substrate by using indium as a solder. Because the light that would otherwise be absorbed by the opaque GaAs substrate is reflected by the high reflectivity metal reflector, the brightness is significantly improved. The high current operating characteristics are also improved by replacing the GaAs substrate with silicon substrate. The luminous efficiency of the new structure AlGaInP LED can achieve more than 40 lm/W in the dominant wavelength range from 585nm to 625nm.

Paper Details

Date Published: 21 June 2004
PDF: 4 pages
Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); doi: 10.1117/12.527373
Show Author Affiliations
Wayne Jan, United Epitaxy Co., Ltd. (Taiwan)
Tzer-Perng Chen, United Epitaxy Co., Ltd. (Taiwan)
Chih-Sung Chang, United Epitaxy Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 5366:
Light-Emitting Diodes: Research, Manufacturing, and Applications VIII
Steve A. Stockman; H. Walter Yao; E. Fred Schubert, Editor(s)

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