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Author(s): Henry M. van Driel; Yaser Kerachian; Beata Derkowska; Ravi D. Bhat; John E. Sipe; Martin Stevens; Arthur L. Smirl
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Paper Abstract

Quantum interference of single and two photon absorption pathways connecting valence and conduction band states in a semiconductor allow one to generate spin currents with or without charge currents. The underlying principles for these generation processes are outlines. We offer experimental demonstration of pure spin currents in GaAs using two color beams configured collinearly to produce spatially homogeneous currents, or non-collinearly to produce spin current gratings.

Paper Details

Date Published: 16 June 2004
PDF: 11 pages
Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); doi: 10.1117/12.527098
Show Author Affiliations
Henry M. van Driel, Univ. of Toronto (Canada)
Yaser Kerachian, Univ. of Toronto (Canada)
Beata Derkowska, Univ. of Toronto (Canada)
Ravi D. Bhat, Univ. of Toronto (Canada)
John E. Sipe, Univ. of Toronto (Canada)
Martin Stevens, Univ. of Iowa (United States)
Arthur L. Smirl, Univ. of Iowa (United States)


Published in SPIE Proceedings Vol. 5352:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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