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Proceedings Paper

Characterization of nanodefects in silicon wafers by white light phase shifting interferometry
Author(s): Ganesha Udupa; Bryan Kok Ann Ngoi; H. C. Freddy Goh; M. N. Yusoff; A. V. Patil
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Paper Abstract

Silicon wafers are widely used in semiconductor and microelectronics industries. With this material, there is an immense need to obtain defect free highly polished surface for improved yield and performance of the micro-components. The Semiconductor Industry Association's (SIA) International Technology Roadmap specifies that by 2005, 30 nm particles must be detectable on bare silicon and non-metallic films, 39 nm particles on metallic films, and 100 nm particles on wafer backsides, for which no solutions currently exist. Both surface and subsurface defects decrease reliability and manufacturing yield of semiconductor devices. Understanding the defect nature, their cause and minimization are equally important to the semiconductor industries. The present work reports on the characterization of these defects by white light phase shifting interferometry.

Paper Details

Date Published: 19 November 2003
PDF: 3 pages
Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); doi: 10.1117/12.526906
Show Author Affiliations
Ganesha Udupa, Nanyang Technological Univ. (Singapore)
Bryan Kok Ann Ngoi, Nanyang Technological Univ. (Singapore)
H. C. Freddy Goh, ISP Pte. Ltd. (Singapore)
M. N. Yusoff, Nanyang Technological Univ. (Singapore)
A. V. Patil, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 4829:
19th Congress of the International Commission for Optics: Optics for the Quality of Life
Giancarlo C. Righini; Anna Consortini, Editor(s)

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