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Proceedings Paper

A large-area CMOS monolithic active pixel sensor for extreme ultraviolet spectroscopy and imaging
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Paper Abstract

We describe our programme to develop science-grade CMOS active pixel sensors for future space science missions, and in particular an extreme ultra-violet spectrograph for solar physics studies on the ESA Solar Orbiter. Our goal is the development of a large format 4k x 4k pixel CMOS sensor with useful sensitivity in the extreme ultra-violet (EUV) for solar physics spectroscopy and imaging. Our route to EUV sensitivity relies primarily in adapting the back-thinning and rear-illumination techniques first developed for CCD sensors; however we are also exploring the alternative approach of using a front-etch to expose the CMOS photodiodes. We have successfully back-thinned several 525 x 525 prototype CMOS sensors and proved that the devices survived the process both structurally and functionally. We have also been successful in removing the oxide from the front side of a small array of pixels, using focused ion beam etching. Preliminary results from these pixels show they are sensitive in the Ultra Violet. We have also designed a working large format 4k x 3k prototype on a 0.25 micron CMOS imager process.

Paper Details

Date Published: 7 June 2004
PDF: 11 pages
Proc. SPIE 5301, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications V, (7 June 2004); doi: 10.1117/12.526401
Show Author Affiliations
Mark L. Prydderch, Rutherford Appleton Lab. (United Kingdom)
Nick R. Waltham, Rutherford Appleton Lab. (United Kingdom)
Quentin Morrissey, Rutherford Appleton Lab. (United Kingdom)
Marcus French, Rutherford Appleton Lab. (United Kingdom)
Renato Turchetta, Rutherford Appleton Lab. (United Kingdom)
Peter Pool, e2v Technologies Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 5301:
Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications V
Nitin Sampat; Morley M. Blouke; Ricardo J. Motta, Editor(s)

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