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Proceedings Paper

Ultrafast carrier dynamics in highly resistive InP and InGaAs produced by ion implantation
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Paper Abstract

Heavy ion implantation into InP and In0.53Ga0.47As and rapid thermal annealing has been applied to produce materials with high resistivity, good mobility and ultrashort carrier lifetime, as required for ultrafast optoelectronic applications. Two implantation methods have been analyzed: Fe+ implantation into semi-insulating InP and InGaAs, and P+ implantation into p-doped InP and InGaAs. Both approaches allow production of layers with high sheet resistance, up to 106 Ω/square for the P+-implanted compounds. Electron mobility in the high resistivity layers is of the order of 102 cm2V-1s-1. Carrier lifetimes, measured by the time-resolved photoluminescence and reflectivity, can be tuned from ~100 femtoseconds to tens of picoseconds by choosing implantation and annealing conditions. Measurements of carrier dynamics have shown that carrier traps act as efficient recombination centers, at least for the case of InP. The dependencies of electrical and ultrafast optical properties on the implantation dose and annealing temperature are determined by the interplay between shallow P and As antisite-related donors, deep Fe-related acceptors and defect complexes.

Paper Details

Date Published: 16 June 2004
PDF: 11 pages
Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); doi: 10.1117/12.526398
Show Author Affiliations
Saulius Marcinkevicius, Royal Institute of Technology (Sweden)
Christine Carmody, Australian National Univ. (Australia)
Andreas Gaarder, Royal Institute of Technology (Sweden)
Hark Hoe Tan, Australian National Univ. (Australia)
Chennupati Jagadish, Australian National Univ. (Australia)

Published in SPIE Proceedings Vol. 5352:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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