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Proceedings Paper

Synthesis and spectroscopic properties of Cr-doped ZnS crystalline thin films
Author(s): Shengyaun Wang; Sergey B. Mirov; Vladimir V. Fedorov; Renato P. Camata
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Paper Abstract

It is demonstrated that pulsed laser deposition is a promising "alternative route" for synthesis of middle infrared laser media based on chromium doped ZnS crystalline thin films with a precisely controllable concentration of dopant. The deposition rate and thickness of the thin films synthesized in our experiments varied for 0.017 to 0.109 nm per pulse and 200 nm up to 12 μm, respectively, depending on the laser energy density, number of pulses, and target-substrate distance. Cr concentration in the target material and grown thin film measured by different techniques were very close to each other for a dynamic range of Cr concentration from ~ 1019 to 3.5 × 1020 cm-3. Thin film features luminescence band which is similar to the band in bulk crystal (slightly blue-shifted). The emission lifetime of Cr2+: ZnS films with Cr2+ concentration of ~2 × 1019 cm-3 was measured to be ~3 μs. The emission lifetime was shortened to 1 μs for 1.8 × 1020 cm-3 and to 0.67 μs for 3.5 × 1020 cm-3 concentration of chromium due to the concentration quenching. Spectroscopic study shows that Cr2+:ZnS thin films synthesized by pulsed laser deposition are promising for middle infrared lasing.

Paper Details

Date Published: 8 July 2004
PDF: 8 pages
Proc. SPIE 5332, Solid State Lasers XIII: Technology and Devices, (8 July 2004); doi: 10.1117/12.525899
Show Author Affiliations
Shengyaun Wang, Univ. of Alabama (United States)
Sergey B. Mirov, Univ. of Alabama at Birmingham (United States)
Vladimir V. Fedorov, Univ. of Alabama at Birmingham (United States)
Renato P. Camata, Univ. of Alabama at Birmingham (United States)


Published in SPIE Proceedings Vol. 5332:
Solid State Lasers XIII: Technology and Devices
Richard Scheps; Hanna J. Hoffman, Editor(s)

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