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Proceedings Paper

Doped chalcogenide glass thin films deposited by pulsed laser ablation
Author(s): A. P. Caricato; M. Fernandez; Gilberto Leggieri; Armando Luches; Maurizio Martino; Francesco Prudenzano
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Paper Abstract

Pr3+-doped chalcogenide glass (GeS2-Ga2S3-CsI) targets were ablated in vacuum (1x10-5 Pa) by XeCl laser pulses. The deposited films were plane, smooth, well adhesive to the substrate and with a composition close to the target one. The film thickness ranged from approximately 500 nm to approximately 2000 nm. The transmittance and reflectance of the deposited films were measured in the range 400 - 2500 nm. The transmittance resulted higher than 80% for wavelengths longer than 900 nm. The optical indices n and k were calculated from the experimental curve as a function of wavelength by means of a commercial computer code. The feasibility of waveguide amplifiers and laser made of Pr3+-doped chalcogenide glass was investigated by an implemented computer code.

Paper Details

Date Published: 19 November 2003
PDF: 2 pages
Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); doi: 10.1117/12.525836
Show Author Affiliations
A. P. Caricato, Univ. degli Studi di Lecce (Italy)
M. Fernandez, Univ. degli Studi di Lecce (Italy)
Gilberto Leggieri, Univ. degli Studi di Lecce (Italy)
Armando Luches, Univ. degli Studi di Lecce (Italy)
Maurizio Martino, Univ. degli Studi di Lecce (Italy)
Francesco Prudenzano, Politecnico di Bari (Italy)


Published in SPIE Proceedings Vol. 4829:
19th Congress of the International Commission for Optics: Optics for the Quality of Life

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