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Proceedings Paper

NIR-enhanced image sensor using multiple epitaxial layers
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Paper Abstract

We present the performance characteristics of a CMOS image sensor, manufactured on wafers with a specially designed multiple epitaxial layer. At the homo-junction between two consecutive epitaxial layers a small potential drop or electric field represents a barrier for electrons diffusing towards the back of the wafer. The multiple epitaxial layer stack results thus in a net drive or confinement of photo-charges towards the surface. As a result there is anisotropical diffusion of charge that are generated deep in the Silicon, e.g. by near infrared (NIR) or X-ray radiation. The spectral response is an order of magnitude higher for than for the same image sensor on "regular" wafers. The anisotropical diffusion results in a limited MTF degradation compared to wafers with a single thick epitaxial layer.

Paper Details

Date Published: 7 June 2004
PDF: 8 pages
Proc. SPIE 5301, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications V, (7 June 2004); doi: 10.1117/12.525726
Show Author Affiliations
Bart Dierickx, FillFactory NV (Belgium)
Jan Bogaerts, FillFactory NV (Belgium)


Published in SPIE Proceedings Vol. 5301:
Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications V
Nitin Sampat; Morley M. Blouke; Ricardo J. Motta, Editor(s)

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