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Proceedings Paper

Modeling the laser-induced diffusible resistance process
Author(s): Michel Meunier; Jean-Yves Degorce; Jean-Numa Gillet; Francois Magny
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Paper Abstract

Highly accurate resistances can be made by iterative laser-induced local diffusion of dopants from the drain and source of a gateless field effect transistor into its channel, thereby forming an electrical link between two adjacent p-n junction diodes. In this paper we present a complete modeling, which permits to obtain the device characteristics from process parameters. Three-dimensional (3D) temperature calculations are performed from heat diffusion equation using an apparent heat capacity formulation. Melted region determinations are satisfactory compared with in-situ real-time optical measurements of the melted region behavior. Then 3D dopant diffusion profiles are calculated using Fick’s diffusion equation. Finally electronic characteristics are obtained from the new tube multiplexing algorithm for computing the I-V characteristic and the device differential resistance. Numerical simulations using our software are satisfactory compared with experimental I-V measurements.

Paper Details

Date Published: 15 July 2004
PDF: 11 pages
Proc. SPIE 5339, Photon Processing in Microelectronics and Photonics III, (15 July 2004); doi: 10.1117/12.525512
Show Author Affiliations
Michel Meunier, Ecole Polytechnique de Montreal (Canada)
LTRIM Technologies, Inc. (Canada)
Jean-Yves Degorce, Ecole Polytechnique de Montreal (Canada)
Jean-Numa Gillet, Ecole Polytechnique de Montreal (Canada)
Francois Magny, Ecole Polytechnique de Montreal (Canada)


Published in SPIE Proceedings Vol. 5339:
Photon Processing in Microelectronics and Photonics III
Jan J. Dubowski; Peter R. Herman; Friedrich G. Bachmann; Willem Hoving; Jim Fieret; David B. Geohegan; Frank Träger; Kunihiko Washio; Alberto Pique; Xianfan Xu; Tatsuo Okada, Editor(s)

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