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Proceedings Paper

High-aspect-ratio etching and characterization of 2D photonic crystals in InP/InGaAsP/InP heterostructures
Author(s): Srinivasan Anand; Min Qiu; Mikael Mulot; Marcin Swillo; Bozena Jaskorzynska; Anders Karlsson
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Paper Abstract

We report on the fabrication and characterization of 2D photonic crystals (PhCs) in InP/InGaAsP/InP heterostructures. It is demonstrated that Ar/Cl2 based chemically assisted ion beam etching (CAIBE) is a very promising method to obtain high aspect ratio etching of PhCs in the InP-based materials. With this process, it is possible to obtain PC-holes as deep as 3 microns even for feature (PhC-hole) sizes as small as 200-250 nm. The optical characteristic of the fabricated PhC-based elements/devices such as line-defect waveguides, in-plane resonant cavities and drop-filter based on contra-directional coupling will be reported. The devices were measured using end-fire coupling and the obtained results were simulated using the 2D finite difference time domain (FDTD) method including an effective loss-approximation. The etched PhC-waveguides show low transmission losses, less than 1 dB/100 μm. A quality factor of 400 for a 6 micron long cavity with 6-hole mirrors is obtained. Finally, drop-functionality in a PhC-based filter using contra-directional coupling is demonstrated.

Paper Details

Date Published: 25 March 2004
PDF: 12 pages
Proc. SPIE 5277, Photonics: Design, Technology, and Packaging, (25 March 2004); doi: 10.1117/12.525050
Show Author Affiliations
Srinivasan Anand, Royal Institute of Technology (Sweden)
Min Qiu, Royal Institute of Technology (Sweden)
Mikael Mulot, Royal Institute of Technology (Sweden)
Marcin Swillo, Royal Institute of Technology (Sweden)
Bozena Jaskorzynska, Royal Institute of Technology (Sweden)
Anders Karlsson, Royal Institute of Technology (Sweden)


Published in SPIE Proceedings Vol. 5277:
Photonics: Design, Technology, and Packaging
Chennupati Jagadish; Kent D. Choquette; Benjamin J. Eggleton; Brett D. Nener; Keith A. Nugent, Editor(s)

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