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Proceedings Paper

Reliable bonding using indium-based solders
Author(s): Jongpil Cheong; Abhijat Goyal; Srinivas Tadigadapa; Christopher Rahn
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Paper Abstract

Low temperature bonding techniques with high bond strengths and reliability are required for the fabrication and packaging of MEMS devices. Indium and indium-tin based bonding processes are explored for the fabrication of a flextensional MEMS actuator, which requires the integration of lead zirconate titanate (PZT) substrate with a silicon micromachined structure at low temperatures. The developed technique can be used either for wafer or chip level bonding. The lithographic steps used for the patterning and delineation of the seed layer limit the resolution of this technique. Using this technique, reliable bonds were achieved at a temperature of 200°C. The bonds yielded an average tensile strength of 5.41 MPa and 7.38 MPa for samples using indium and indium-tin alloy solders as the intermediate bonding layers respectively. The bonds (with line width of 100 microns) showed hermetic sealing capability of better than 10-11 mbar-l/s when tested using a commercial helium leak tester.

Paper Details

Date Published: 23 December 2003
PDF: 7 pages
Proc. SPIE 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III, (23 December 2003); doi: 10.1117/12.524823
Show Author Affiliations
Jongpil Cheong, The Pennsylvania State Univ. (United States)
Abhijat Goyal, The Pennsylvania State Univ. (United States)
Srinivas Tadigadapa, The Pennsylvania State Univ. (United States)
Christopher Rahn, The Pennsylvania State Univ. (United States)

Published in SPIE Proceedings Vol. 5343:
Reliability, Testing, and Characterization of MEMS/MOEMS III
Danelle M. Tanner; Rajeshuni Ramesham, Editor(s)

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