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Proceedings Paper

Femtosecond pulse damage behavior of oxide dielectric thin films
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Paper Abstract

Pulse duration and band-gap scaling of the laser breakdown threshold fluence of oxide dielectrics were measured using various (TiO2, Ta2O5, HfO2, Al2O3, and SiO2) single layer thin films. The observed scaling with pulse duration was explained by an empirical model including multi-photon and avalanche ionization, and conduction band electron decay. The results suggest the formation of self-trapped excitons on a sub-ps time-scale, which can cause significant energy transfer to the lattice. At constant pulse duration, the band-gap scaling was found to be approximately linear. This linear scaling can be explained by the Keldysh photo-ionization theory and avalanche ionization in the flux-doubling approximation.

Paper Details

Date Published: 10 June 2004
PDF: 9 pages
Proc. SPIE 5273, Laser-Induced Damage in Optical Materials: 2003, (10 June 2004); doi: 10.1117/12.524571
Show Author Affiliations
Mark Mero, Univ. of New Mexico (United States)
Jianhua Liu, Fudan Univ. (China)
Joachim Zeller, Univ. of New Mexico (United States)
Wolfgang G. Rudolph, Univ. of New Mexico (United States)
Kai Starke, Laser Zentrum Hannover e.V. (Germany)
Detlev Ristau, Laser Zentrum Hannover e.V. (Germany)

Published in SPIE Proceedings Vol. 5273:
Laser-Induced Damage in Optical Materials: 2003
Gregory J. Exarhos; Arthur H. Guenther; Norbert Kaiser; Keith L. Lewis; M. J. Soileau; Christopher J. Stolz, Editor(s)

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