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Proceedings Paper

Nanocrystalline mesoporous SMO thin films prepared by sol gel process for MEMS-based hydrogen sensor
Author(s): Jianwei Gong; Weifeng Fei; Sudipta Seal; Quanfang Chen
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Paper Abstract

MEMS based SnO2 gas sensor with sol gel synthesized mesoporous nanocrystalline (<10 nm) semiconductor thin (100~150 nm) film has been recently developed. The SnO2 nano film is fabricated with the combination of polymeric sol gel chemistry with block copolymers used for structure directing agents. The novel hydrogen sensor has a fast response time (1s) and quick recovery time (3s), as well as good sensitivity (about 90%), comparing to other hydrogen sensors developed. The improved capabilities are credited to the large surface to volume ratio of gas sensing thin film with nano sized porous surface topology, which can greatly increase the sensitivity even at relatively low working temperature. The gas sensing film is deposited onto a thin dielectric membrane of low thermal conductivity, which provides good thermal isolation between substrate and the gas-sensitive heated area on the membrane. In this way the power consumption can be kept very low. Since the fabrication process is completely compatible with IC industry, it makes mass production possible and greatly reduces the cost. The working temperature of the new sensor can be reduced as low as 100°C. The low working temperature posse advantages such as lower power consumption, lower thermal induced signal shift as well as safe detection in certain environments where temperature is strictly limited.

Paper Details

Date Published: 24 January 2004
PDF: 8 pages
Proc. SPIE 5346, MOEMS and Miniaturized Systems IV, (24 January 2004); doi: 10.1117/12.524530
Show Author Affiliations
Jianwei Gong, Univ. of Central Florida (United States)
Weifeng Fei, Univ. of Central Florida (United States)
Sudipta Seal, Univ. of Central Florida (United States)
Quanfang Chen, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 5346:
MOEMS and Miniaturized Systems IV
Ayman El-Fatatry, Editor(s)

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