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Proceedings Paper

Characterization of the microloading effect in deep reactive ion etching of silicon
Author(s): Soren Jensen; Ole Hansen
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Paper Abstract

Knowledge of the magnitude and characteristic length scales of chip-scale process variations due to varying substrate pattern density is essential if compensation measures, such as incorporation of dummy structures, are to be taken during mask layout. Effects of variations in local pattern density on a deep reactive ion etch (DRIE) process have been investigated, and a decrease of the etch rate with increasing local pattern density within a characteristic radius of approximately 4.5 mm has been found. Analytical and numerical calculations confirm the existence of a similar depletion radius under the experimental conditions used.

Paper Details

Date Published: 30 December 2003
PDF: 8 pages
Proc. SPIE 5342, Micromachining and Microfabrication Process Technology IX, (30 December 2003); doi: 10.1117/12.524461
Show Author Affiliations
Soren Jensen, Technical Univ. of Demark (Denmark)
Ole Hansen, Technical Univ. of Demark (Denmark)


Published in SPIE Proceedings Vol. 5342:
Micromachining and Microfabrication Process Technology IX
Mary Ann Maher; Jerome F. Jakubczak, Editor(s)

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