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Proceedings Paper

Analysis of nitride-based quantum well LEDs and novel white LED design
Author(s): Dong Xiao; Ki Wook Kim; Salah M. Bedair; John M. Zavada
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Paper Abstract

Fundamental electrical and optical properties of strained wurtzite InGaN/GaN-based quantum well light emitting diodes are calculated based on the Rashba-Sheka-Pikus Hamiltonian in the vicinity of the Gamma point. The theoretical results show an excellent correlation with experiments. A novel design of using AlInGaN as quantum barrier is proposed to realize efficient red emission, which is hard to achieve if GaN is used as barrier. To achieve high efficiency, the important factors relating to the oscillator strength are discussed in detail.

Paper Details

Date Published: 21 June 2004
PDF: 12 pages
Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); doi: 10.1117/12.524424
Show Author Affiliations
Dong Xiao, North Carolina State Univ. (United States)
Ki Wook Kim, North Carolina State Univ. (United States)
Salah M. Bedair, North Carolina State Univ. (United States)
John M. Zavada, U.S. Army Research Office (United States)


Published in SPIE Proceedings Vol. 5366:
Light-Emitting Diodes: Research, Manufacturing, and Applications VIII
Steve A. Stockman; H. Walter Yao; E. Fred Schubert, Editor(s)

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