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Proceedings Paper

Fabrication of silicon microstructures using a high-energy ion beam
Author(s): Ee Jin Teo; Minghui Liu; Mark Brian Howell Breese; Emmanuel P. Tavernier; Andrew A. Bettiol; Daniel John Blackwood; Frank Watt
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Paper Abstract

We report an alternative technique which utilizes fast proton or helium ion irradiation prior to electrochemical etching for three-dimensional micro-fabrication in bulk p-type silicon. The ion-induced damage increases the resistivity of the irradiated regions and slows down porous silicon formation. A raised structure of the scanned area is left behind after removal of the un-irradiated regions with potassium hydroxide. The thickness of the removed material depends on the irradiated dose at each region so that multiple level structures can be produced with a single irradiation step. By exposing the silicon to different ion energies, the implanted depth and hence structure height can be precisely varied. We demonstrate the versatility of this three-dimensional patterning process to create multilevel cross structure and free-standing bridges in bulk silicon, as well as sub-micron pillars and high aspect-ratio nano-tips.

Paper Details

Date Published: 29 December 2003
PDF: 7 pages
Proc. SPIE 5347, Micromachining Technology for Micro-Optics and Nano-Optics II, (29 December 2003); doi: 10.1117/12.524314
Show Author Affiliations
Ee Jin Teo, National Univ. of Singapore (Singapore)
Minghui Liu, National Univ. of Singapore (Singapore)
Mark Brian Howell Breese, National Univ. of Singapore (Singapore)
Emmanuel P. Tavernier, National Univ. of Singapore (Singapore)
Andrew A. Bettiol, National Univ. of Singapore (Singapore)
Daniel John Blackwood, National Univ. of Singapore (Singapore)
Frank Watt, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 5347:
Micromachining Technology for Micro-Optics and Nano-Optics II
Eric G. Johnson; Gregory P. Nordin, Editor(s)

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