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Proceedings Paper

Study of chalcogenide-glass-based reflecting optical marks
Author(s): Leonid I. Muravsky; Sergij O. Kostyukevych; Taras I. Voronyak; Petro E. Shepeliavyi
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Paper Abstract

The new reflecting optical mark is created. This mark has been received by recording of a joint power spectrum (JPS) of a transformed and reference phase masks on a chalcogenide glass As40S40Se20. In order to fabricate the reflecting optical mark, we must choose the optimum exposure of its writing. We have offered the procedure for calculation of such exposure by using the experimental dependence of diffraction efficiency as a function of a chalcogenide glass layer exposure and the analytical equation for the JPS of two phase masks containing rectangular phase elements. This procedure includes the calculation of the correlation peak relative intensity as a function of the JPS interference pattern frequency band that is read by laser beam, and calculation of the dependence "peak relative intensity versus exposure." The proposed reflecting marks allow realizing the quantitative estimation of a secured product authenticity due to producing of a correlation field and realization of the mark's identification procedure. The experimental setups based on an optical Fourier processor architecture were created for writing of reflecting optical marks and their reading and identification. The experimental examinations of dependency between a peak-to-noise ratio and exposure of a chalcogenide glass layer for the series of fabricated reflective marks were carried out. The obtained results were compared with theoretical results.

Paper Details

Date Published: 3 June 2004
PDF: 10 pages
Proc. SPIE 5310, Optical Security and Counterfeit Deterrence Techniques V, (3 June 2004); doi: 10.1117/12.524108
Show Author Affiliations
Leonid I. Muravsky, Karpenko Physico-Mechanical Institute (Ukraine)
Sergij O. Kostyukevych, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Taras I. Voronyak, Karpenko Physico-Mechanical Institute (Ukraine)
Petro E. Shepeliavyi, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 5310:
Optical Security and Counterfeit Deterrence Techniques V
Rudolf L. van Renesse, Editor(s)

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