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Proceedings Paper

Ultrashort pulse damage of semiconductors
Author(s): Bernd Hüttner
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Paper Abstract

First, we give a briefly critically discuss the existing definitions of melting and damage thresholds and the different kinds of experimental determinations of the thresholds. Then we investigate the thermal and athermal melting of oxides (wide-band gap semiconductors) and of silicon by solving a rate equation for the excited electrons and a by complete self-consistent solution of a coupled system of differential equations for the electron density and for the electron and phonon temperatures. In particular, we direct our attention to the still open question about the value for the critical electron density in the case of athermal melting.

Paper Details

Date Published: 10 June 2004
PDF: 8 pages
Proc. SPIE 5273, Laser-Induced Damage in Optical Materials: 2003, (10 June 2004); doi: 10.1117/12.524095
Show Author Affiliations
Bernd Hüttner, Deutsches Zentrum für Luft- and Raumfahrt e.V. (Germany)

Published in SPIE Proceedings Vol. 5273:
Laser-Induced Damage in Optical Materials: 2003
Gregory J. Exarhos; Arthur H. Guenther; Norbert Kaiser; Keith L. Lewis; M. J. Soileau; Christopher J. Stolz, Editor(s)

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