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Proceedings Paper

Effect of surface electronic properties of ITO on luminance efficiency of OLEDs
Author(s): Furong Zhu; Hu Jian Qiao; Liew Yoon Fei; Kian Soo Ong; Xiaotao Hao
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Paper Abstract

We report the results of an effort to understand the effect of surface electronic structure of indium tin oxide (ITO) on luminance efficiency of organic light-emitting devices (OLED)s. Nitric oxide (NO) plasma was used to modify the ITO. NO plasma induced an increase in the sheet resistance of ITO. The surface electronic structure of ITO was studied using X-ray photoelectron spectroscopy. An approximately 4-nm thick low conductivity layer with a production of N-O type species was formed near the ITO surface region. It is demonstrated that the barrier for hole-injection from an ITO anode to a hole transporting layer can be engineered by NO plasma treatment. The increase in luminance efficiency of the OLEDs reflects an improved current balance in the device.

Paper Details

Date Published: 25 March 2004
PDF: 11 pages
Proc. SPIE 5277, Photonics: Design, Technology, and Packaging, (25 March 2004); doi: 10.1117/12.523950
Show Author Affiliations
Furong Zhu, Institute of Materials Research and Engineering (Singapore)
Hu Jian Qiao, Institute of Materials Research and Engineering (Singapore)
Liew Yoon Fei, Institute of Materials Research and Engineering (Singapore)
Kian Soo Ong, Institute of Materials Research and Engineering (Singapore)
Xiaotao Hao, Institute of Materials Research and Engineering (Singapore)

Published in SPIE Proceedings Vol. 5277:
Photonics: Design, Technology, and Packaging
Chennupati Jagadish; Kent D. Choquette; Benjamin J. Eggleton; Brett D. Nener; Keith A. Nugent, Editor(s)

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