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Proceedings Paper

The recent and prospective developments of cooled IR FPAs for double application at Electron NRI
Author(s): V. A. Arutunov; I. S. Vasilyev; V. G. Ivanov; A. E. Prokofyev
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Paper Abstract

The recent and prospective developments of monolithic silicon IR-Schottky-barrier staring focal plane arrays (IR SB FPAs), photodetector assembly, and digital thermal imaging cameras (TICs) at Electron National Research Institute (Electron NRI) are considered. Basic parameters for IR SB FPAs with 256x256 and 512x512 pixels, and TICs based on these arrays are presented. The problems emerged while proceeding from the developments of IR SB FPAs for the wavelength range from 3 μm to 5 μm to the developments of those ones for xLWIR range are indicated (an abrupt increase in the level of background architecture). Possibility for further improvement in basic parameters of IR SB FPAs are discussed (a decrease in threshold signal power down to 0.5÷1.0•1013 W/element with an increase in quantum efficiency, a decrease in output noise and proceeding to Schottky barriers of degenerated semiconductor/silicon heterojunction, and implementation of these array parameters in photodetector assembly with improved thermal background shielding taking into consideration an optical structure of TIC for concrete application). It is concluded that relative simplicity of the technology and expected low cost of monolithic silicon IR SB FPAs with basic parameters compared with hybrid IR FPAs for the wavelength ranges from 3 μm to 5 μm and from 8 μm to 12 μm maintain large monolithic IR SB FPAs as a basis for developments of double application digital TICs in the Russian Federation.

Paper Details

Date Published: 30 September 2003
PDF: 10 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.523893
Show Author Affiliations
V. A. Arutunov, Electron National Research Institute (Russia)
I. S. Vasilyev, Electron National Research Institute (Russia)
V. G. Ivanov, Electron National Research Institute (Russia)
A. E. Prokofyev, Electron National Research Institute (Russia)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices

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