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Proceedings Paper

Area-changed capacitive accelerometer using 3-mask fabrication process
Author(s): Yeop Majlis Burhanuddin; Bais Badariah; Agus Santoso Tamsir
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Paper Abstract

This paper presents an area-changed capacitive accelerometer using a 3-mask fabrication process. The accelerometer is designed as finger structures connected in parallel that have a differential capacitor arrangement. The movable electrodes are mounted on a proof mass of silicon and a pair of stationary electrodes of polysilicon is formed under the mass with a 3 μm air gap. The fabrication process utilizes silicon/glass anodic bonding and deep reactive ion etching (DRIE) for high aspect ratio etching. The simulated mass displacement change rate is 0.076 μm/g and the overall sensitivity is -0.04/μm. This type of accelerometer will be characterized for low-g as well as for medium-g applications.

Paper Details

Date Published: 2 April 2004
PDF: 7 pages
Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); doi: 10.1117/12.523631
Show Author Affiliations
Yeop Majlis Burhanuddin, Univ. Kebangsaan Malaysia (Malaysia)
Bais Badariah, Univ. Kebangsaan Malaysia (Malaysia)
Agus Santoso Tamsir, Univ. Kebangsaan Malaysia (Malaysia)


Published in SPIE Proceedings Vol. 5276:
Device and Process Technologies for MEMS, Microelectronics, and Photonics III
Jung-Chih Chiao; Alex J. Hariz; David N. Jamieson; Giacinta Parish; Vijay K. Varadan, Editor(s)

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