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Proceedings Paper

Design and calculation characteristics of a novel diode-pumped long-wavelength vertical-external-cavity surface-emitting semiconductor laser
Author(s): Changling Yan; Li Qin; Shumin Zhang; Jingchang Zhong; Yongqiang Ning; Yun Liu; Lijun Wang; Huiling Jiang
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Paper Abstract

A novel design of diode-pumped long wavelength vertical-external-cavity surface-emitting semiconductor laser with GaInNAs/GaAs multiple quantum wells at 1.3μm as an active region optically pumped by 980nm diode laser is proposed in this paper. The device design realizes the integrating diode-pumped lasers with long wavelength vertical-cavity surface-emitting laser structure, drawing on the advantages of both. The characteristics such as threshold condition and output power are calculated theoretically. An optimum number of quantum wells is obtained from the calculation results, and the calculation results also predict high output power (>500mW) in this kind of device structure. Finally the thermal characteristic is also considered.

Paper Details

Date Published: 12 May 2004
PDF: 7 pages
Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.523621
Show Author Affiliations
Changling Yan, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Changchun Univ. of Science and Technology (China)
Li Qin, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Shumin Zhang, Jilin Univ. (China)
Jingchang Zhong, Changchun Univ. of Science and Technology (China)
Yongqiang Ning, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Yun Liu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Lijun Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Huiling Jiang, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 5280:
Materials, Active Devices, and Optical Amplifiers
Connie J. Chang-Hasnain; Dexiu Huang; Yoshiaki Nakano; Xiaomin Ren, Editor(s)

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