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Proceedings Paper

Picosecond structural dynamics in photoexcited semiconductors probed by time-resolved x-ray diffraction
Author(s): Kazutaka G. Nakamura; Hiroaki Kishimura; Yoichiro Hironaka; Ken-ichi Kondo
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Paper Abstract

Structural dynamics of 300-ps laser irradiated semiconductor is studied by means of picosecond time-resolved X-ray diffraction. Picosecond pulsed X rays are generated by focusing intense femtosecond laser beams onto metal target. Time-resolved X-ray diffraction is performed by a laser pump and X-ray probe technique. Lattice expansion due to acoustic phonon generation and propagation is observed in a silicon crystal in a single laser shot experiment at laser energy density of 1.0 J/cm2. On the other hand, in a multiple laser shot experiment, lattice compression due to laser shock compression is observed at 1.4 J/cm2.

Paper Details

Date Published: 16 June 2004
PDF: 9 pages
Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); doi: 10.1117/12.523554
Show Author Affiliations
Kazutaka G. Nakamura, Tokyo Institute of Technology (Japan)
Hiroaki Kishimura, Tokyo Institute of Technology (Japan)
Yoichiro Hironaka, Tokyo Institute of Technology (Japan)
Ken-ichi Kondo, Tokyo Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 5352:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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