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Proceedings Paper

A comparison of uranium oxide and nickle as single-layer reflectors from 2.7 to 11.6 nm
Author(s): Richard L. Sandberg; David D. Allred; J. E. Johnson; R. Steven Turley
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Paper Abstract

We present the measured reflectances (Beamline 6.3.2, ALS at LBNL) of naturally oxidized uranium and naturally oxidized nickel thin films from 2.7 to 11.6 nm at 5°, 10°, and 15° grazing incidence. These show that uranium, as UO2, can fulfill its promise as the highest known single surface reflector for this portion of the soft x-ray region, being nearly twice as reflective as nickel in the 5-10 nm region. This is due to its large index of refraction coupled with low absorption. Nickel is commonly used in soft x-ray applications in astronomy and synchrotrons. (Its reflectance at 10° exceeds that of Au and Ir for most of this range.) We prepared uranium and nickel thin films via DC-magnetron sputtering of a depleted U target and resistive heating evaporation respectively. Ambient oxidation quickly brought the U sample to UO2 (total thickness about 30 nm). The nickel sample (50 nm) also acquired a thin native oxide coating (<2nm). Though the density of U in UO2 is only half of the metal, its reflectance is high and it is relatively stable against further changes. There are important discrepancies between UO2’s actual reflectance with those predicted by the atomic scattering factor model indicative of the need to determine the actual constants of UO2.

Paper Details

Date Published: 13 January 2004
PDF: 13 pages
Proc. SPIE 5193, Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications, (13 January 2004); doi: 10.1117/12.523478
Show Author Affiliations
Richard L. Sandberg, Brigham Young Univ. (United States)
David D. Allred, Brigham Young Univ. (United States)
J. E. Johnson, Brigham Young Univ. (United States)
R. Steven Turley, Brigham Young Univ. (United States)

Published in SPIE Proceedings Vol. 5193:
Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications
Ali M. Khounsary; Udo Dinger; Kazuya Ota, Editor(s)

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