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Investigations of ohmic contacts to reactive ion-etched p-type GaN
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Paper Abstract

This paper will detail investigations into rapid thermal annealing (RTA) treatment of ohmic contacts to reactive ion etch (RIE) damaged p-type GaN. It was found that annealing at moderate temperatures in N2 atmosphere can improve the ohmic nature of contacts to RIE-damaged p-GaN. After chlorine-based RIE treatment of the p-GaN surface the sheet resistance and contact resistivity of the ohmic contact metallisation scheme increased, and the contacts became extremely non-ohmic. After RTA treatment in N2 atmosphere at 550°C, linearity of the I-V curves was substantially improved, and the contact resistivity decreased. This improvement is most likely related to improvements in the metal-GaN interface and/or improvements in the bulk material when protected by the contact metal. Unprotected surfaces were further damaged (manifested as higher sheet resistance) by the annealing procedure.

Paper Details

Date Published: 2 April 2004
PDF: 10 pages
Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); doi: 10.1117/12.523252
Show Author Affiliations
Giacinta Parish, Univ. of Western Australia (Australia)
L. M. Watson, Univ. of Western Australia (Australia)
Gilberto Umana Membreno, Univ. of Western Australia (Australia)
Brett Douglas Nener, Univ. of Western Australia (Australia)

Published in SPIE Proceedings Vol. 5276:
Device and Process Technologies for MEMS, Microelectronics, and Photonics III
Jung-Chih Chiao; Alex J. Hariz; David N. Jamieson; Giacinta Parish; Vijay K. Varadan, Editor(s)

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