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Proceedings Paper

Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
Author(s): Ying-Qiang Xu; Wei Zhang; Zichuang Niu; Ronghan Wu; Qiming Wang
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Paper Abstract

Effects of SiO2 encapsulation and rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs single quantum well (SQW) were studied by low temperature photoluminescence (PL). A blueshift of the PL peak energy for both the SiO2-capped region and the bare region was observed. The results were attributed to the nitrogen reorganization in the GaNAs/GaAs SQW. It was also shown that the nitrogen reorganization was obviously enhanced by SiO2 cap-layer. A simple model [1] was used to describe the SiO2-enhanced blueshift of the low temperature PL peak energy.

Paper Details

Date Published: 12 May 2004
PDF: 6 pages
Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.523225
Show Author Affiliations
Ying-Qiang Xu, Institute of Semiconductors (China)
Wei Zhang, Institute of Semiconductors (China)
Zichuang Niu, Institute of Semiconductors (China)
Ronghan Wu, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 5280:
Materials, Active Devices, and Optical Amplifiers
Connie J. Chang-Hasnain; Dexiu Huang; Yoshiaki Nakano; Xiaomin Ren, Editor(s)

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