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Proceedings Paper

Visible electro-luminescence from p-n junction porous Si diode
Author(s): Hongjian Li; Hao-Yang Cui; Baiyun Huang; Danqing Yi; Jingcui Peng
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Paper Abstract

The interface formed between a p-type conducting polyaniline layer and a n-type porous silicon wafer was studied. The contact has rectifying behavior demonstrated clearly by the IV curves. The series resistance Rs in the p-type conducting polyaniline/n-porous Si diode is reduced greatly and has a lower onset voltage compared with. ITO/n-porous Si diode. The porous silicon has an orange photoluminescence band after coating with polyaniline. Visible electroluminescence has been obtained from this junction when a forward bias is applied. The emission band is very broad extending from 600-803 nm with a peak at 690nm.

Paper Details

Date Published: 12 May 2004
PDF: 9 pages
Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.523014
Show Author Affiliations
Hongjian Li, Hunan Univ. (China)
South Central Univ. (China)
Hao-Yang Cui, Hunan Univ. (China)
Baiyun Huang, Central South Univ. (China)
Danqing Yi, Central South Univ. (China)
Jingcui Peng, Hunan Univ. (China)


Published in SPIE Proceedings Vol. 5280:
Materials, Active Devices, and Optical Amplifiers
Connie J. Chang-Hasnain; Dexiu Huang; Yoshiaki Nakano; Xiaomin Ren, Editor(s)

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