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Proceedings Paper

Formation process of Si nanoparticles deposited by pulse laser ablation
Author(s): Yinglong Wang; Rongmei Zhang; Guangsheng Fu; Yingcai Peng; Li Han; Lizhi Chu
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Paper Abstract

The deposited dynamic process of Si nanoparticles prepared by pulsed laser ablation is numerically simulated by using the direct simulation Monte Carlo method. It is found that there is a mixed region where the high-density Si vapor peak and the gas peak are overlapped. The Si nanoparticles are formed by Si vapor condensation in the region and their sizes depend on the properties of the region such as density and range. The properties of the mixed region are changed constantly when its position are oscillated with time is increased, and get to stable state at certain a time, i.e., oscillating time. The oscillating time determines the distribution of nanoparticles in size. The influence of the experimental parameters on oscillating time of the mixed region is analyzed theoretically. The results show that the Si-based nanostructure materials with more uniform nanoparticles in size can be obtained by using appropriate proportion of He and Ar as ambient gas.

Paper Details

Date Published: 12 May 2004
PDF: 7 pages
Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.523004
Show Author Affiliations
Yinglong Wang, Hebei Univ. (China)
Rongmei Zhang, Hebei Univ. (China)
Guangsheng Fu, Hebei Univ. (China)
Yingcai Peng, Hebei Univ. (China)
Li Han, Hebei Univ. (China)
Lizhi Chu, Hebei Univ. (China)

Published in SPIE Proceedings Vol. 5280:
Materials, Active Devices, and Optical Amplifiers
Connie J. Chang-Hasnain; Dexiu Huang; Yoshiaki Nakano; Xiaomin Ren, Editor(s)

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