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Proceedings Paper

High-coupling efficiency and high-speed InP/InGaAs resonant-cavity-enhanced photodetector with micropectinated carrier collected layer
Author(s): Hui Huang; Lei Lei; Yanjun Li; Qi Wang; Yongqing Huang; Xiaomin Ren
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Paper Abstract

High efficiency, long wavelengths InP/InGaAs resonant-cavity enhanced (RCE) Photodetector was fabricated. To circumvent the difficulty in achieving high reflective InP-based DBR, the Si/SiO2 DBR was evaporated as the bottom mirror of the cavity by using back illumination from the substrate. A quantum efficiency of 80% at 1.583um was achieved with an absorption layer thickness of only 0.2um. In addition, the Micro-pectinated Carrier-Collected Layer (MCCL) was fabricated by proton implantations, thus device capacitance can be reduced without decreasing of the illuminating area. The bandwidth was increased from 600MHz to 800MHz experimentally by formation of MCCL, without decreasing of the quantum efficiency.

Paper Details

Date Published: 12 May 2004
PDF: 5 pages
Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.523000
Show Author Affiliations
Hui Huang, Beijing Univ. of Posts and Telecommunications (China)
Lei Lei, Beijing Univ. of Posts and Telecommunications (China)
Yanjun Li, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 5280:
Materials, Active Devices, and Optical Amplifiers
Connie J. Chang-Hasnain; Dexiu Huang; Yoshiaki Nakano; Xiaomin Ren, Editor(s)

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