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Proceedings Paper

Optoelectronic investigation of novel PbSrSe thin films for mid-infrared device applications
Author(s): Wen Zhong Shen
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Paper Abstract

We review our recently combined study of temperature-dependent photoluminescence, absorption, and photocurrent measurements with theoretical models on PbSrSe thin films grown by molecular beam epitaxy for the key properties of PbSrSe thin films and their microstructures. The derived empirical equations for band gaps, effective masses, and refractive indices have been employed successfully in PbSrSe/PbSe multiple quantum well (MQW) mid-infrared laser systems, which opens the way for the design of IV-VI MQW mid-infrared lasers. The infrared detection of PbSrSe thin films has been demonstrated at different temperatures, where the spectral intensity and wavelength coverage are determined by the band gap and the film thickness. The bias- and frequency-dependent capacitance characteristics have also been investigated in detail.

Paper Details

Date Published: 6 July 2004
PDF: 12 pages
Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); doi: 10.1117/12.522914
Show Author Affiliations
Wen Zhong Shen, Shanghai Jiaotong Univ. (China)


Published in SPIE Proceedings Vol. 5359:
Quantum Sensing and Nanophotonic Devices
Manijeh Razeghi; Gail J. Brown, Editor(s)

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