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Proceedings Paper

Preparation of PZT films derived by hybrid processing for MEMS application
Author(s): Lijun Yan; Zhan Jie M. Wang; Hiroyuki Kokawa; Ryutaro Maeda
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Paper Abstract

Pb(Zr0.52Ti0.48)O3 thin films were prepared on Pt/Ti/SiO2/Si substrates by hybrid processing: sol-gel method and pulsed laser deposition. The temperature of postdeposition annealing in hybrid processing is 650°C, and is lower than that in the case of direct film deposition by pulsed laser deposition on a Pt/Ti/SiO2/Si substrate. The preferred orientation of the PZT films obtained by hybrid processing can be controlled using the seed layer obtained by the sol-gel process. The TEM image showed that the PZT films have a polycrystalline columnar microstructure extending throughout the thickness of the film and no shape interface was observed between the layers obtained by the sol-gel method and the pulsed laser deposition process. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The 1-μm-thick PZT films fabricated by hybrid processing consist of mainly the perovskite phase with a (111)-preferred orientation and have good ferroelectric properties. The ferroelectric parameters were remanent polarization Pr = 23.6 μC/cm2, and coercive field Ec = 54.8 kV/cm.

Paper Details

Date Published: 2 April 2004
PDF: 8 pages
Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); doi: 10.1117/12.522807
Show Author Affiliations
Lijun Yan, Tohoku Univ. (Japan)
Zhan Jie M. Wang, Tohoku Univ. (Japan)
Hiroyuki Kokawa, Tohoku Univ. (Japan)
Ryutaro Maeda, National Institute of Advanced Industrial Science and Technology (Japan)


Published in SPIE Proceedings Vol. 5276:
Device and Process Technologies for MEMS, Microelectronics, and Photonics III
Jung-Chih Chiao; Alex J. Hariz; David N. Jamieson; Giacinta Parish; Vijay K. Varadan, Editor(s)

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