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Proceedings Paper

Formation and its characteristics of PLZT layered film structure for transducers
Author(s): Masaaki Ichiki; Takeshi Kobayashi; Yasushi Morikawa; Yosuke Mabune; Takeshi Nakada; Kazuhiro Nonaka; Chiaki Endo; Ryutaro Maeda
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Paper Abstract

This paper reports on the formation of a new layered film structure and the highly improved photovoltaic output of the lead lanthanum zirconate titanate (PLZT) employed. PLZT film was deposited onto a Pt/Ti/SiO2/Si substrate and sandwiched vertically between electrodes. The new structure design is described using a top transparent indium tin oxide (ITO) electrode. Inspection by X-ray diffraction revealed that the PLZT film had a perovskite structure. The PLZT film structure exhibited V and μA output. This means that the photovoltaic current of the PLZT film per unit width was more than 102 times larger than that of bulk PLZT, while the photovoltaic voltage per unit thickness in the layered film structure was almost the same as that in bulk ceramics. These differences are due to the characteristics of the film structure and configuration of the electrode. In addition to the photovoltaic output the PLZT film also has the advantage of its easily controllable parameters: film thickness, illuminated area and illumination intensity. A simple model is used for the phenomenological explanation of the improved photovoltaic effect of the PLZT film.

Paper Details

Date Published: 2 April 2004
PDF: 8 pages
Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); doi: 10.1117/12.522794
Show Author Affiliations
Masaaki Ichiki, National Institute of Advanced Industrial Science and Technology (Japan)
Takeshi Kobayashi, National Institute of Advanced Industrial Science and Technology (Japan)
Yasushi Morikawa, National Institute of Advanced Industrial Science and Technology (Japan)
Yosuke Mabune, Tokyo Denki Univ. (Japan)
Takeshi Nakada, Tokyo Denki Univ. (Japan)
Kazuhiro Nonaka, National Institute of Advanced Industrial Science and Technology (Japan)
Chiaki Endo, Takeshima Sangyo Co., Ltd. (Japan)
Ryutaro Maeda, National Institute of Advanced Industrial Science and Technology (Japan)


Published in SPIE Proceedings Vol. 5276:
Device and Process Technologies for MEMS, Microelectronics, and Photonics III
Jung-Chih Chiao; Alex J. Hariz; David N. Jamieson; Giacinta Parish; Vijay K. Varadan, Editor(s)

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