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Proceedings Paper

Comprehensive analysis of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different thickness of setback layers
Author(s): Shiou-Ying Cheng; Chun-Yuan Chen; Jing-Yuh Chen; Hung-Ming Chuang; Wen-Chau Liu; Wen-Lung Chang; Hsi-Jen Pan; Pao-Chuan Chen
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Paper Abstract

We specifically studied the influence of a setback-layer thickness on the device performances so as to optimize the required value. Theoretical analysis shows that an optimized setback-layer thickness is available to effectively reduce the barrier height while maintain good device performances. In this work, the effects of a setback-layer thickness on the DC and RF performances of an InGaP/GaAs heterojunction bipolar transistor (HBT) are investigated. Based on the theoretical analysis, the optimized setback-layer thickness WSB is about of 10~30Å for analog amplification. On the other hand, for digital saturated logic application, i.e., a small offset voltage with an acceptable current gain, the optimized WSB could be up to 50 Å. Therefore, this analysis and predication may cause the considerable promise for practical circuit applications.

Paper Details

Date Published: 2 April 2004
PDF: 8 pages
Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); doi: 10.1117/12.522286
Show Author Affiliations
Shiou-Ying Cheng, Oriental Institute of Technology (Taiwan)
Chun-Yuan Chen, National Cheng Kung Univ. (Taiwan)
Jing-Yuh Chen, National Cheng Kung Univ. (Taiwan)
Hung-Ming Chuang, National Cheng Kung Univ. (Taiwan)
Wen-Chau Liu, National Cheng Kung Univ. (Taiwan)
Wen-Lung Chang, Oriental Institute of Technology (Taiwan)
Hsi-Jen Pan, Oriental Institute of Technology (Taiwan)
Pao-Chuan Chen, Oriental Institute of Technology (Taiwan)


Published in SPIE Proceedings Vol. 5276:
Device and Process Technologies for MEMS, Microelectronics, and Photonics III
Jung-Chih Chiao; Alex J. Hariz; David N. Jamieson; Giacinta Parish; Vijay K. Varadan, Editor(s)

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