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Proceedings Paper

InP/InGaAs heterojunction bipolar transistor (HBT) with a multiple-quantum-well (MQW) structure
Author(s): Wen-Chau Liu; Der-Feng Guo; Jing-Yuh Chen; Chun-Yuan Chen; Hung-Ming Chuang
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Paper Details

Date Published:
Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, ; doi: 10.1117/12.522282
Show Author Affiliations
Wen-Chau Liu, National Cheng Kung Univ. (Taiwan)
Der-Feng Guo, Chinese Air Force Academy (Taiwan)
Jing-Yuh Chen, National Cheng Kung Univ. (Taiwan)
Chun-Yuan Chen, National Cheng Kung Univ. (Taiwan)
Hung-Ming Chuang, National Cheng Kung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 5274:
Microelectronics: Design, Technology, and Packaging
Derek Abbott; Kamran Eshraghian; Charles A. Musca; Dimitris Pavlidis; Neil Weste, Editor(s)

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