Share Email Print
cover

Proceedings Paper

InP/InGaAs heterojunction bipolar transistor (HBT) with a multiple-quantum-well (MQW) structure
Author(s): Wen-Chau Liu; Der-Feng Guo; Jing-Yuh Chen; Chun-Yuan Chen; Hung-Ming Chuang
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Details

Date Published:
PDF
Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, ; doi: 10.1117/12.522282
Show Author Affiliations
Wen-Chau Liu, National Cheng Kung Univ. (Taiwan)
Der-Feng Guo, Chinese Air Force Academy (Taiwan)
Jing-Yuh Chen, National Cheng Kung Univ. (Taiwan)
Chun-Yuan Chen, National Cheng Kung Univ. (Taiwan)
Hung-Ming Chuang, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 5274:
Microelectronics: Design, Technology, and Packaging
Derek Abbott; Kamran Eshraghian; Charles A. Musca; Dimitris Pavlidis; Neil Weste, Editor(s)

© SPIE. Terms of Use
Back to Top