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Proceedings Paper

Study on DC characteristics of NpN InP/GaAsSb/InP double heterojunction bipolar transistors (HBT's)
Author(s): Yuan Tian
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Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, ; doi: 10.1117/12.522275
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Yuan Tian, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 5274:
Microelectronics: Design, Technology, and Packaging
Derek Abbott; Kamran Eshraghian; Charles A. Musca; Dimitris Pavlidis; Neil Weste, Editor(s)

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