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Proceedings Paper

Study of alternating phase-shift mask structure for 65-nm node devices
Author(s): Toshio Konishi; Tooru Komizo; Hiroyuki Takahashi; Motohiko Morita; Takashi Ohshima; Kazuaki Chiba; Yosuke Kojima; Jun Sasaki; Keishi Tanaka; Masao Otaki; Yoshimitsu Okuda
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Paper Abstract

To extend 193nm lithography to 65nm node devices, alternating phase shift mask structure were optimized. Both single trench and dual trench structure was evaluated. The optimization was performed by rigorous electro-magnetic field simulation of light scattering in 3D mask topographies. Evaluation masks were fabricated according to the simulation results, and the mask image was evaluated by using AIMS fab193 (Carl Zeiss). Prior to the optimization, limitation of shallow trench depth and undercut size was considered from the standpoint of “mask making”. Maximum undercut size was defined in order to prevent the Cr pattern peeling in cleaning process. In the optimized structure, CD difference between adjacent patterns with 0-space and π-space is within ±10nm wiht 300nm focus margin for different pattern pitches.

Paper Details

Date Published: 17 December 2003
PDF: 9 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.522180
Show Author Affiliations
Toshio Konishi, Toppan Printing Co., Ltd. (Japan)
Tooru Komizo, Toppan Printing Co., Ltd. (Japan)
Hiroyuki Takahashi, Toppan Printing Co., Ltd. (Japan)
Motohiko Morita, Toppan Printing Co., Ltd. (Japan)
Takashi Ohshima, Toppan Printing Co., Ltd. (Japan)
Kazuaki Chiba, Toppan Printing Co., Ltd. (Japan)
Yosuke Kojima, Toppan Printing Co., Ltd. (Japan)
Jun Sasaki, Toppan Printing Co., Ltd. (Japan)
Keishi Tanaka, Toppan Printing Co., Ltd. (Japan)
Masao Otaki, Toppan Printing Co., Ltd. (Japan)
Yoshimitsu Okuda, Toppan Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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