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Proceedings Paper

Fabrication of thin-film transistors on plastic substrates by spin etching and device transfer process
Author(s): Shuo-Cheng Wang; Chung-Ti Hsu; Ching-Fa Yeh; Jen-Chung Lou
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Paper Abstract

This work presents a novel method to transfer thin-film transistors from a Si wafer to another flexible plastic substrate. First, high-performance poly-Si TFTs were fabricated on 1-μm thick SiO2 of a Si wafer and then adhered to a flexible plastic substrate by the optical adhesive. Next, the spin-etching process was utilized to remove the backside Si with SiO2 as a stopping layer. We have established a qualitative model to explain the relation between the chemical flow rate/rotation speed to the etching rate and the uniformity of Si removal. The Si etching rate is higher than 200 μm/min while maintaining Si to SiO2 selectivity of 250 under optimized spin-etching parameters. Compared to that before transference, no degradation or yield loss was found due to substrate bonding and Si spin-etching steps. Additionally, extrinsic stress shows little effect to the properties of poly-Si resistors on the flexible plastic substrate.

Paper Details

Date Published: 2 April 2004
PDF: 8 pages
Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); doi: 10.1117/12.522034
Show Author Affiliations
Shuo-Cheng Wang, National Chiao Tung Univ. (Taiwan)
Chung-Ti Hsu, National Chiao Tung Univ. (Taiwan)
Ching-Fa Yeh, National Chiao Tung Univ. (Taiwan)
Jen-Chung Lou, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 5276:
Device and Process Technologies for MEMS, Microelectronics, and Photonics III
Jung-Chih Chiao; Alex J. Hariz; David N. Jamieson; Giacinta Parish; Vijay K. Varadan, Editor(s)

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