Share Email Print

Proceedings Paper

InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor
Author(s): Chin-Chuan Cheng; Shiou-Ying Cheng; Hung-Ming Chuang; Chun-Yuan Chen; Po-Hsien Lai; Chung-I Kao; Ching-Wen Hong; Chun-Wei Chen; Wen-Chau Liu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator," good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.

Paper Details

Date Published: 30 March 2004
PDF: 9 pages
Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, (30 March 2004); doi: 10.1117/12.522021
Show Author Affiliations
Chin-Chuan Cheng, National Cheng-Kung Univ. (Taiwan)
Shiou-Ying Cheng, Oriental Institute of Technology (Taiwan)
Hung-Ming Chuang, National Cheng-Kung Univ. (Taiwan)
Chun-Yuan Chen, National Cheng-Kung Univ. (Taiwan)
Po-Hsien Lai, National Cheng-Kung Univ. (Taiwan)
Chung-I Kao, National Cheng-Kung Univ. (Taiwan)
Ching-Wen Hong, National Cheng-Kung Univ. (Taiwan)
Chun-Wei Chen, National Cheng-Kung Univ. (Taiwan)
Wen-Chau Liu, National Cheng-Kung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 5274:
Microelectronics: Design, Technology, and Packaging
Derek Abbott; Kamran Eshraghian; Charles A. Musca; Dimitris Pavlidis; Neil Weste, Editor(s)

© SPIE. Terms of Use
Back to Top