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Proceedings Paper

Piezoresistive pressure sensors in CVD diamond for high-temperature applications
Author(s): Ralf Otterbach; Ulrich Hilleringmann
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Paper Abstract

The fabrication of piezo-resistive pressure sensors for high temperature applications by the selective removal of CVD-diamond is limited due to the jutting physical properties of this material, which result in insufficient etching rates. A novel technique with distinctly increased etching rates due to a modified sample arrangement inside of a commercially available reactive ion etching (RIE) reactor overcomes this limitation by a restricted plasma volume. Rates up to 334 nm/min imply an increase of more than one order of magnitude in comparison with additional measurements utilizing a standard etching technique. Furthermore, the electrical response of a fabricated sensor on pressure is demonstrated.

Paper Details

Date Published: 2 September 2003
PDF: 4 pages
Proc. SPIE 5253, Fifth International Symposium on Instrumentation and Control Technology, (2 September 2003); doi: 10.1117/12.521928
Show Author Affiliations
Ralf Otterbach, Univ. of Paderborn (Germany)
Ulrich Hilleringmann, Univ. of Paderborn (Germany)


Published in SPIE Proceedings Vol. 5253:
Fifth International Symposium on Instrumentation and Control Technology
Guangjun Zhang; Huijie Zhao; Zhongyu Wang, Editor(s)

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