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Proceedings Paper

Accurately nonselective and selective etching of GaAs/Al0.8Ga0.2As/AlAs structure for making air-gap cavity
Author(s): Zhou Zhen; Yun Du; Yongqing Huang; Ronghan Wu; Xiaomin Ren
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Paper Abstract

We have demonstrated a wet etching technique capable of fabricating air-gap cavity. The process utilizes nonselective and selective etchants respectively to form air-gap cavity. The etching characteristics of GaAs/Al0.8Ga0.2As/AlAs structure in different nonselective and selective etchants are investigated. The volumetric 3:2:20 ratios of H3PO4/H2O2/H2O solution and volumetric 600:1 ratio of DI water/buffered oxide [mixture of 7:1 NH4F(36%)-HF(6.4%)] solution are better nonselective and selective etchants respectively. We have used this process technique to form a tunable air-gap cavity optical filter. The measure results of the transmission spectral show that the air-gap cavity has high optical quality. These simple etching processes can be applied to fabricate the air-gap cavity devices.

Paper Details

Date Published: 12 May 2004
PDF: 7 pages
Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.521698
Show Author Affiliations
Zhou Zhen, Beijing Univ. of Posts and Telecommunications (China)
Yun Du, Institute of Semiconductors (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)
Ronghan Wu, Institute of Semiconductors (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 5280:
Materials, Active Devices, and Optical Amplifiers
Connie J. Chang-Hasnain; Dexiu Huang; Yoshiaki Nakano; Xiaomin Ren, Editor(s)

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