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Proceedings Paper

Using a mixed emitting layer of hole and electron transporting molecules to improve the performance of MOLED
Author(s): Fengying Ma; Chunyu Zhang; Yun Liu; Yongqiang Ning; Xingyuan Liu; Li Qin; Changqin Jin; Lijun Wang
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Paper Abstract

Performance of the devices is significantly influenced by the charge balance between holes and electrons since the excess of one type over the other would lead to an increase in current but no emission contribution. The device performances were dramatically enhanced by using a mixed emitting layer of NPB and Alq3 molecules, placed between pure NPB and Alq3 layer. Comparing with the conventional heterostructure the turn-on voltage was reduced from 7v to 4v and the V--L characteristics was also improved by mixing hole and electron transporting layers. By changing the weight ratio of NPB and Alq3 the spectrum have 33nm shift and the CIE coordinates have relevant change.

Paper Details

Date Published: 12 May 2004
PDF: 4 pages
Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.521636
Show Author Affiliations
Fengying Ma, Lab. of Excited State Processes (China)
Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chunyu Zhang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Yun Liu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Yongqiang Ning, Lab. of Excited State Processes (China)
Changchun Institute of Optics, Fine Mechanics and Physics (China)
Xingyuan Liu, Lab. of Excited State Processes (China)
Changchun Institute of Optics, Fine Mechanics and Physics (China)
Li Qin, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Changqin Jin, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Lijun Wang, Lab. of Excited State Processes (China)


Published in SPIE Proceedings Vol. 5280:
Materials, Active Devices, and Optical Amplifiers
Connie J. Chang-Hasnain; Dexiu Huang; Yoshiaki Nakano; Xiaomin Ren, Editor(s)

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