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Proceedings Paper

Diode UV detectors using oxide semiconductor thin films deposited by magnetron sputtering
Author(s): Tadatsugu Minami; Hideki Tanaka; Takahiro Shimakawa; Toshihiro Miyata
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Paper Abstract

This paper describes the fabrication of pn heterojunction thin-film diodes using polycrystalline oxide semiconducting thin films. Al-oped ZnO (AZO) and Mg-doped CuCrO2 (CuCrO2:Mg) thin films used as n- and p-type oxide semiconducting layers, respectively, were prepared on glass substrates by r.f. magnetron sputtering using a powder target. The resulting p-type CuCrO2:Mg thin films prepared with a Mg content of 7 at.% exhibited at resistivity as low as 1.3x10-2Ωcm and a band-gap energy of 3.3 eV. The voltage-current (V-I) characteristic of a pn junction fabricated using p+-CuCrO2:Mg and n+-AZO thin films exhibited an ohmic, or linear, relationship. In addition, a pin heterojunction diode was fabricated by depositing high resistivity undoped ZnO and CuCrO2 thin-film layers, or i-layers, between the n+ -AZO and the p+-CuCrO2:Mg thin-film layers. The resulting p+-CuCrO2:Mg/i-CuCrO2/i-ZnO/n+-AZO thin-film pin junction diode exhibited a rectifying V-I characteristic and a photovoltage under UV light illumination.

Paper Details

Date Published: 30 March 2004
PDF: 8 pages
Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, (30 March 2004); doi: 10.1117/12.521590
Show Author Affiliations
Tadatsugu Minami, Kanazawa Institute of Technology (Japan)
Hideki Tanaka, Kanazawa Institute of Technology (Japan)
Takahiro Shimakawa, Kanazawa Institute of Technology (Japan)
Toshihiro Miyata, Kanazawa Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 5274:
Microelectronics: Design, Technology, and Packaging
Derek Abbott; Kamran Eshraghian; Charles A. Musca; Dimitris Pavlidis; Neil Weste, Editor(s)

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