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Proceedings Paper

Nonlinear free carrier absorption in semiconductor heterostructures in the terahertz regime
Author(s): Chao Zhang; Saeid Hessami Pilehrood
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Paper Abstract

Absorption of electromagnetic waves in electronic systems coupled to intense terahertz waves is calculated. We formulate a theoretical framework suitable for calculating the frequency-dependent electrical current under an intense THz radiation. This first principle method is based on the time-evolution of electron density matrix and it includes electron-photon coupling to all orders. We first obtained the time-dependent electronic states as a function of terahertz field and frequency. The electron-impurity scattering is included to the second order. The absorption of electromagnetic waves of a probing field via various electron-terahertz-photon coupling is then obtained in terms of frequency-dependent dielectric functions.

Paper Details

Date Published: 25 March 2004
PDF: 8 pages
Proc. SPIE 5277, Photonics: Design, Technology, and Packaging, (25 March 2004); doi: 10.1117/12.521175
Show Author Affiliations
Chao Zhang, Univ. of Wollongong (Australia)
Saeid Hessami Pilehrood, Univ. of Wollongong (Australia)

Published in SPIE Proceedings Vol. 5277:
Photonics: Design, Technology, and Packaging
Chennupati Jagadish; Kent D. Choquette; Benjamin J. Eggleton; Brett D. Nener; Keith A. Nugent, Editor(s)

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